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JSIR340-4 bare die emitter (3.6x3.6x0.36 mm³)

JSIR340-4 bare die emitter | VKM0920673_411

MEMS-emitter-chip at wafer level for mass markets in NDIR gas analysis

  • Economy MEMS emitter bare die
  • Spectral output range 2 ... 15 µm
  • Long lifetime
  • Time constant of 23 ms,
  • Diced chips on tape
1.368,63 

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Description

The cost-efficient infrared emitter chip JSIR340-4 bare die is optimized for NDIR gas analysis and other infrared measurement applications such as DIR spectroscopy, ATR spectroscopy or PAS spectroscopy - with optimum in the spectral range from 2 to 15 µm. The CMOS based emitter chip with an active area of 2.2 x 2.2 mm2 reaches membrane temperatures of up to 750 °C. It enables long-term stable radiation performance for industrial applications for control and monitoring of process gases, associated gases at ambient temperatures between - 20 and 85 °C.

The emitter chips are available at the wafer level (4-inch). The included digital wafer map enables automated pick and place for system integration.

The MEMS chip consists of a multilayer hot plate membrane based on a silicon substrate with a back-etched membrane. All thin film processes are performed using standard MEMS processes and CMOS compatible materials. The active C-MOSI resistive layer is protected from aging and environmental effects by a high temperature stable metal CMOSI layer.

All technical information can be found in the data sheet. Our sales team will be happy to advise you on scale prices for larger quantities.

Technical data

Active area [mm²] 2.2 x 2.2
Spectral output [µm] Typ. 2–15
Temperature coefficient [ppm/K.] Typ. 1200
Time constant [ms] Typ. 23
Nominal power [W] 0,65
Measuring gas
  • CO2
  • H2O
  • NO
  • SF6
  • N2O
  • CO
  • SO2
  • -OH
  • CH4
  • CXHY
  • Halothan
  • Desfluran
  • Isofluran
Size [inch] 4
Chips pro Wafer 411