Cost efficient infrared emitter for NDIR gas analysis and other infrared measurement applications.
With only 250 mW required input power, the emitter is also suitable for mobile - and handheld devices. The membrane of this CMOS based ir source achieves membrane temperatures up to 800 °C with long term stable radiation power and short time constant. For high volume applications such as building air conditioning, automation and others, the JSIR340 is suitable due to its excellent price/performance ratio.
The packaging with reflector is good for measruement distances from 2 cm. The MEMS emitter chip consists of a multilayer hotplate membrane containing a high temperature stable metal CMOSI layer. The emitter chip is based on a silicon substrate with a back-etched membrane. All thin film processes are performed with standard MEMS processes and CMOS compatible materials. The active C-MOSI resistor layer is protected against aging and environment.
For more technical information see the datasheet or contact our sales team.
|Active area [mm²]||1.0 x 1.0|
|Spectral output [µm]||Typ. 2–15|
|Time constant [ms]||Typ. 8|
|Nominal power [W]||0,25|