C_MOSI®IR source, TO46 with cap

Cost-effective IR radiation source for NDIR gas analysis and other infrared measurement applications. The membrane of the MEMS IR emitters is based on C-MOSI® technology and reaches membrane temperatures up to 800° C. It enables long-term stable radiant power. The low required input power of the emitter also allows stand-alone and handheld applications. The MEMS chip used in our infrared emitters consists of a multilayer heating plate membrane containing a high temperature stable metal CMOSI layer. The emitter chip is based on a silicon substrate with an etched backside membrane. All thin film processes are performed with standard MEMS processes and CMOS-compatible materials. The active C-MOSI resistive layer is protected against aging and the environment.