C_MOSI®IR source, TO46 with cap

Economy IR emitters for large quantities in gas analysis applications with low input power.

  • hot-plate temperatures up to 800 °C appropriate radiation output
  • high modulation depth due to low thermal mass
  • cost efficient solution suitable for handheld devices
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  • Description

  • Technical data

Cost-effective IR radiation source for NDIR gas analysis and other infrared measurement applications. The membrane of the MEMS IR emitters is based on C-MOSI® technology and reaches membrane temperatures up to 800° C. It enables long-term stable radiant power. The low required input power of the emitter also allows stand-alone and handheld applications. The MEMS chip used in our infrared emitters consists of a multilayer heating plate membrane containing a high temperature stable metal CMOSI layer. The emitter chip is based on a silicon substrate with an etched backside membrane. All thin film processes are performed with standard MEMS processes and CMOS-compatible materials. The active C-MOSI resistive layer is protected against aging and the environment.

Model JSIR350-5
Item number JSIR340-5-BL-C-D2.55-0-0
Housing TO46
Add-on Cap
Window/filter No
Filling gas No
Active area [mm²] 0.65 x 0.65
Power consumption Low