The cost-efficient infrared emitter JSIR340-4 is optimized for NDIR gas analysis and other infrared measurement applications such as DIR spectroscopy, ATR spectroscopy or PAS spectroscopy. The membrane of the CMOS based IR emitter reaches membrane temperatures of up to 800° C. It provides long-term stable radiation output for industrial applications for control and monitoring of process gases, associated gases at ambient temperatures between -20 and 85 °C. The packaging version in the standard TO housing with cap is suitable for measuring distances up to 2 cm.
The MEMS chip used in our IR emitters consists of a multilayer hot plate diaphragm containing a high temperature stable metal CMOSI layer. The emitter chip has an active area of 2.2 x 2.2 mm2 and is based on a silicon substrate with a back-etched membrane. All thin film processes are performed using standard MEMS processes and CMOS compatible materials. The active C-MOSI resistive layer is protected against aging and environment. Our sales team will be happy to advise you on customization and scale prices for high volumes. For more technical information please refer to the datasheet.
|Active area [mm²]||2.2 x 2.2|
|Spectral output [µm]||Typ. 2–15|
|Temperature coefficient [ppm/K.]||Typ. 1250|
|Time constant [ms]||Typ. 15|
|Nominal power [W]||0,65|